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2N2222 Datasheet, Equivalent, Cross Reference Search Type Designator: 2N2222 SMD Transistor Code: 1B Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.5 W Maximum Collector-Base Voltage Vcb : 60 V Maximum Collector-Emitter Voltage Vce : 30 V Maximum Emitter-Base Voltage Veb : 5 V Maximum Collector Current Ic max : 0.8 A Max. Operating Junction Temperature (Tj): 175 °C Transition Frequency (ft): 250 MHz Collector Capacitance (Cc): 8 pF Forward Current Transfer Ratio (hFE), MIN: 100 Noise Figure, dB: - Package: TO18.

Cross-Reference Search 2N2222 Datasheet (PDF) 1.1. Size:563K _upd SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE 1.2.

Size:1138K _upd 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS 1 2 BVCEO min 40 V 50 V 3 IC (max) 0.8 A TO-18 3 3 hFE at 10 V - 150 mA 100 4 1 1 2 2 • Hermetic packages LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid. • Up to 100 krad(Si) low dose ratee Description Figure 1. Internal schematic 1.3.

Aug 19, 2016 - Common 2N transistors usually have EBC pinout (that requires some wire-twisting when replacing). NTE () suggests NTE85 to replace C3198,. 2N5401 4 Figure 5. Temperature Coefficients Figure 6. Switching Time Test Circuit IC, COLLECTOR CURRENT (mA) 2.5 C, CAPACITANCE (pF) 100 TJ = 25°C.

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Size:563K _upd SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N2222AC1 • High Speed Saturated Switching • Hermetic Surface Mounted Package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VE 1.4.

Size:165K _upd P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Devi 1.5. Size:86K _upd SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package.

• Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas 1.6. Size:86K _upd SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas 1.7. Size:138K _upd TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/255 DEVICES LEVELS JANSM – 3K Rads (Si) 2N2221A 2N2222A JANSD – 10K Rads (Si) 2N2221AL 2N2222AL JANSP – 30K Rads (Si) 2N2221AUA 2N2222AUA 1.8. Gameboot do psp go.

Size:86K _upd SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage 75V VCEO Collector – Emitter Voltage 50V VEBO Emitter – Bas 1.9. Size:238K _motorola MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc 1.10. Size:238K _motorola MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc 1.11. Size:53K _philips DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max.